Vertical Metal Oxide Semiconductor

What Does Vertical Metal Oxide Semiconductor Mean?

A vertical metal oxide semiconductor (VMOS) is a type of metal oxide semiconductor (MOS) transistor, so named because of the V-shaped groove which is vertically cut into the substrate to act as the gate of the transistor to allow the delivery of a higher amount of current coming from the source towards the “drain” of the device.

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A vertical metal oxide semiconductor is also known as a V-groove MOS.

Techopedia Explains Vertical Metal Oxide Semiconductor

A vertical metal oxide semiconductor is constructed by forming four different diffused layers in silicon and then etching a V-shaped groove in the middle vertically at a precisely controlled depth through the layers. The gate electrode is then formed within the V-shaped groove by depositing metal, usually gallium nitride (GaN), over silicon dioxide in the groove.

VMOS has been primarily used as a “stop-gap” power device until better geometries such as the UMOS or trench-gate MOS were introduced, which creates a lower electric field at the top which then leads to higher maximum voltages than what is possible with VMOS transistors.

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Margaret Rouse
Technology Expert

Margaret is an award-winning technical writer and teacher known for her ability to explain complex technical subjects to a non-technical business audience. Over the past twenty years, her IT definitions have been published by Que in an encyclopedia of technology terms and cited in articles by the New York Times, Time Magazine, USA Today, ZDNet, PC Magazine, and Discovery Magazine. She joined Techopedia in 2011. Margaret's idea of a fun day is helping IT and business professionals learn to speak each other’s highly specialized languages.