Extreme Ultraviolet Lithography (EUVL)
Definition - What does Extreme Ultraviolet Lithography (EUVL) mean?
EUVL makes use of super-charged xenon gas, which emits ultraviolet light and uses very precise micro-mirrors to focus the light onto the silicon wafer to produce even finer feature widths.
Techopedia explains Extreme Ultraviolet Lithography (EUVL)
The EUVL process is as follows:
A laser is directed at xenon gas, which heats it up to create plasma.
The plasma radiates light at 13 nanometers.
The light is gathered in a condenser and then directed onto a mask that contains the layout of the circuit board. The mask is actually just a pattern representation of a single layer of the chip. This is created by applying an absorber to some parts of the mirror but not to other parts, creating the circuit pattern.
The mask pattern is reflected onto a series of four to six mirrors, which get progressively smaller in order to shrink the image size before it's focused into the silicon wafer. The mirror bends the light slightly to form the image, much like how a camera’s set of lenses work to bend light and put an image on film.
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